| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device configured to prevent short circuitings between word-lines and bit-lines. SOLUTION: The semiconductor device includes a semiconductor substrate having a memory cell array MCA; an outside part of memory cell array EMCA positioned in an outer circumference of the memory cell array MCA; an outermost circumferential region where the memory cell array MCA is brought close to the outside part of memory cell array EMCA; and bit lines BL formed above an intermediary insulating film on the semiconductor substrate to extend above dummy contact plugs DCT1 of a group of contacts CT1 in a first stage and connect to a second contacts CT2 of a group of contacts formed in a second stage, extending from the memory cell array MCA to the outside part of memory cell array EMCA, beyond the outermost circumferential region. COPYRIGHT: (C)2011,JPO&INPIT
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