SiC EPITAXIAL WAFER AND METHOD FOR MANUFACTURING SAME

摘要

Disclosed is an SiC epitaxial wafer, which has reduced triangular defects and lamination defects, high carrier concentration uniformity and high film thickness uniformity, and is step-bunching-free. Also disclosed is a method for manufacturing the wafer. In the SiC epitaxial wafer, an SiC epitaxial layer is formed on a 4H-SiC single crystal substrate which is tilted by an off-angle of 0.4-5°. The defect density of the triangular defects on the surface of the SiC epitaxial layer is 1 defect/cm2 or less.