SYSTEM AND METHOD FOR THE RELAXATION OF STRESS IN PHASE CHANGE MEMORY DEVICES
摘要
A phase change memory device that utilizes a nanowire structure. Usage of the nanowire structure permits the phase change memory device to release its stress upon amorphization via the minimization of reset resistance and threshold resistance.
申请公布号
WO2011075197(A2)
申请公布日期
2011.06.23
申请号
WO2010US50134
申请日期
2010.09.24
申请人
THE TRUSTEES OF THE UNIVERSITY OF PENNSYLVANIA;AGARWAL, RITESH;MITRA, MUKUT;JUNG, YEONWOONG