SEMICONDUCTOR DEVICE STRUCTURES WITH MODULATED DOPING AND RELATED METHODS
摘要
<p>A semiconductor device may include a doped semiconductor region having a modulated dopant concentration. The doped semiconductor region may be a silicon doped Group III nitride semiconductor region with a dopant concentration of silicon being modulated in the Group III nitride semiconductor region. In addition, a semiconductor active region may be configured to generate light responsive to an electrical signal therethrough. Related methods, devices, and structures are also discussed.</p>
申请公布号
WO2011075519(A1)
申请公布日期
2011.06.23
申请号
WO2010US60467
申请日期
2010.12.15
申请人
CREE, INC.;DRISCOLL, DANIEL CARLETON;CHAVAN, ASHONITA;SAXLER, ADAM WILLIAM
发明人
DRISCOLL, DANIEL CARLETON;CHAVAN, ASHONITA;SAXLER, ADAM WILLIAM