| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a graphite crucible which is used for producing a silicon single crystal by a Czochralski method and has long service life. <P>SOLUTION: The graphite crucible includes a degassing hole provided in the corner part of the crucible. A gas generated by the reaction between a quartz crucible and the graphite crucible is released to the outside through the degassing hole to prevent formation of SiC on the surface of the graphite crucible and to prevent deformation of the quartz crucible by gas pressure. <P>COPYRIGHT: (C)2011,JPO&INPIT</p> |
