发明名称 |
PLASMA PROCESSING SYSTEM WITH LOCALLY-EFFICIENT INDUCTIVE PLASMA COUPLING |
摘要 |
An inductively coupled plasma source is provided with a peripheral ionization source for producing a high-density plasma in a vacuum chamber for semiconductor wafer coating or etching. The source includes a segmented configuration having high and low radiation segments and produces a generally ring-shaped array of alternating high and low energy concentrations in the plasma around the periphery of the chamber. Energy is coupled from a segmented low inductance antenna through a dielectric window or array of windows and through a segmented shield or baffle. The antenna has concentrated conductor segments through which current flows in lengths of closely-spaced windings of a single conductor to produce high magnetic fields that couple through the high-transparency shield segments into the chamber, and alternating distributed conductor segments through which current flows in lengths of more widely-spaced windings of the conductor to produce weaker magnetic fields aligned with more opaque shield sections that couple less energy to the plasma.
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申请公布号 |
US2011146911(A1) |
申请公布日期 |
2011.06.23 |
申请号 |
US20100973227 |
申请日期 |
2010.12.20 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
BRCKA JOZEF;ROBISON RODNEY LEE |
分类号 |
H01L21/00;B08B13/00;H01J37/32 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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