发明名称 FORMING METHOD AND STRUCTURE OF POROUS LOW-K LAYER, INTERCONNECT PROCESS AND INTERCONNECT STRUCTURE
摘要 A structure of a porous low-k layer is described, comprising a bottom portion and a body portion of the same atomic composition, wherein the body portion is located on the bottom portion, and the bottom portion has a density higher than the density of the body portion. An interconnect structure is also described, including the above porous low-k layer, and a conductive layer filling up a damascene opening in the porous low-k layer.
申请公布号 US2011147948(A1) 申请公布日期 2011.06.23
申请号 US201113038612 申请日期 2011.03.02
申请人 UNITED MICROELECTRONICS CORP. 发明人 CHEN MEI-LING;LAI KUO-CHIH;SUNG SU-JEN;HUANG CHIEN-CHUNG;LAI YU-TSUNG
分类号 H01L23/48;B32B7/02 主分类号 H01L23/48
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