摘要 |
The present invention relates to a method for producing an electronic component, in particular a field-effect transistor (FET), comprising at least one substrate, at least one dielectric, and at least one semiconducting metal oxide, wherein the dielectric or a precursor compound thereof based on organically modified silicon oxide compounds, in particular based on silsequioxanes and/or siloxanes, can be processed out of solution, and is thermally treated at a low temperature from room temperature to 350 °C, and the semiconductive metal oxide, in particular ZnO or a precursor compound thereof, can also be processed from solution at a low temperature from room temperature to 350 °C. |
申请人 |
BASF SE;FLEISCHHAKER, FRIEDERIKE;WLOKA, VERONIKA;KAISER, THOMAS |
发明人 |
FLEISCHHAKER, FRIEDERIKE;WLOKA, VERONIKA;KAISER, THOMAS |