发明名称 |
METHOD OF GAS DISTRIBUTION AND NOZZLE DESIGN IN THE IMPROVED CHEMICAL VAPOR DEPOSITION OF POLYSILICON REACTOR |
摘要 |
An improved process and apparatus for uniform gas distribution in chemical vapor deposition (CVD) Siemens type processes is provided. The process comprises introduction of a silicon-bearing gas tangentially to and uniformly along the length of a growing silicon rod in a CVD reactor, resulting in uniform deposition of polysilicon along the rod. The apparatus comprises an improved gas nozzle design and arrangement along the length of the rod, promoting uniform deposition of polysilicon. |
申请公布号 |
US2011151137(A1) |
申请公布日期 |
2011.06.23 |
申请号 |
US20100970562 |
申请日期 |
2010.12.16 |
申请人 |
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发明人 |
REVANKAR VITHAL;LAHOTI SANJEEV |
分类号 |
B05D3/06;C23C16/00;C23C16/22 |
主分类号 |
B05D3/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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