发明名称 APPARATUS AND METHOD FOR PROTECTING POWER SEMICONDUCTOR SWITCH ELEMENT
摘要 <p>Disclosed is a short-circuit protection apparatus for semiconductor switch elements used at a high voltage, such as an IGBT. The short-circuit protection apparatus detects a short-circuit state easily with less possibility of malfunction, even if there is no current sensing switch element, and protects the semiconductor switch elements from breaking. The apparatus detects, as voltage information, the level of a current in the IGBT (1) wherein the current is being carried, on the basis of a divided voltage obtained by dividing the voltage on the collector side using a high resistor (2) and resistors (3, 4) for detection, then, the apparatus estimates power loss in the IGBT (1) on the basis of the voltage value, and estimates a heat value on the basis of the power loss. When the estimated heat value exceeds a predetermined value, the apparatus gradually reduces a gate signal voltage and protects the IGBT (1).</p>
申请公布号 WO2011074403(A1) 申请公布日期 2011.06.23
申请号 WO2010JP71355 申请日期 2010.11.30
申请人 HITACHI, LTD.;SUGINO, TOMOHIRO;SHIRAHAMA, HIDEFUMI 发明人 SUGINO, TOMOHIRO;SHIRAHAMA, HIDEFUMI
分类号 H02M1/00 主分类号 H02M1/00
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