| 摘要 |
Methods are disclosed for forming a layered structure comprising a self-assembled material. A method comprises disposing a photoresist layer comprising a non-crosslinking, positive-tone photoresist on a surface of a substrate; optionally baking the photoresist layer; pattern-wise exposing the photoresist layer to first radiation; optionally baking the exposed photoresist layer; developing the exposed photoresist layer with an aqueous alkaline developer to form an initial patterned photoresist layer. The initial patterned photoresist layer is treated photochemically, thermally, and/or chemically to form a treated patterned photoresist layer comprising non-crosslinked treated photoresist, wherein the treated photoresist is insoluble in a given organic solvent suitable for casting a given material capable of self-assembly, and the treated photoresist is soluble in the aqueous alkaline developer and/or a second organic solvent. A solution comprising the given material capable of self-assembly dissolved in the given organic solvent is casted on the treated patterned photoresist layer, and the given organic solvent is removed. The casted given material is allowed to self-assemble while optionally heating and/or annealing the casted material, thereby forming the layered structure comprising the self-assembled material.
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