发明名称 METHOD OF FORMING METAL OXIDE FILM AND APPARATUS FOR FORMING METAL OXIDE FILM
摘要 A method of forming a metal oxide film, which can lower a temperature of a heat treatment of a substrate and also can form a metal oxide film having a low resistance value without limiting the kind of the metal oxide film to be formed. The method of forming a metal oxide film includes (A) converting a solution containing a metal into mist, (B) heating a substrate, and (C) supplying the solution converted into mist, and ozone to a first main surface of the substrate under heating.
申请公布号 US2011151619(A1) 申请公布日期 2011.06.23
申请号 US200813059128 申请日期 2008.09.24
申请人 TOSHIBA MITSUBISHI-ELECTRIC INDUSTRIAL SYS. CORP. 发明人 ORITA HIROYUKI;YOSHIDA AKIO;KOGURA MASAHISA;SHIRAHATA TAKAHIRO;TANAKA SYUJI
分类号 H01L21/36;H01L21/443 主分类号 H01L21/36
代理机构 代理人
主权项
地址