发明名称 THREE-DIMENSIONAL CAPACITOR AND TOPOLOGICAL DESIGN METHOD FOR SUCH A CAPACITOR
摘要 A three-dimensional capacitor is formed from a multilayer of superposed electrodes. The electrodes are formed within respective metallization levels of an integrated circuit. At least two additional superposed electrodes are formed on top of the multilayer. Each additional electrode is formed from a branched rectilinear structure including at least one bar aligned in a first direction and a plurality of branches extending from that at least one bar in a second direction.
申请公布号 US2011149468(A1) 申请公布日期 2011.06.23
申请号 US200913060152 申请日期 2009.08.24
申请人 STMICROELECTRONICS S.A. 发明人 PICOLLET ERIC;DEGLISE-FAVRE CLAIRE;MAGAND REMI
分类号 H01G4/228;G06F17/50 主分类号 H01G4/228
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