发明名称 |
THREE-DIMENSIONAL CAPACITOR AND TOPOLOGICAL DESIGN METHOD FOR SUCH A CAPACITOR |
摘要 |
A three-dimensional capacitor is formed from a multilayer of superposed electrodes. The electrodes are formed within respective metallization levels of an integrated circuit. At least two additional superposed electrodes are formed on top of the multilayer. Each additional electrode is formed from a branched rectilinear structure including at least one bar aligned in a first direction and a plurality of branches extending from that at least one bar in a second direction.
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申请公布号 |
US2011149468(A1) |
申请公布日期 |
2011.06.23 |
申请号 |
US200913060152 |
申请日期 |
2009.08.24 |
申请人 |
STMICROELECTRONICS S.A. |
发明人 |
PICOLLET ERIC;DEGLISE-FAVRE CLAIRE;MAGAND REMI |
分类号 |
H01G4/228;G06F17/50 |
主分类号 |
H01G4/228 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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