发明名称 |
METHODS FOR DEPOSITING HIGH-K DIELECTRICS |
摘要 |
Methods for depositing high-K dielectrics are described, including depositing a first electrode on a substrate, wherein the first electrode is chosen from the group consisting of platinum and ruthenium, applying an oxygen plasma treatment to the exposed metal to reduce the contact angle of a surface of the metal, and depositing a titanium oxide layer on the exposed metal using at least one of a chemical vapor deposition process and an atomic layer deposition process, wherein the titanium oxide layer comprises at least a portion rutile titanium oxide.
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申请公布号 |
US2011151136(A1) |
申请公布日期 |
2011.06.23 |
申请号 |
US201113039819 |
申请日期 |
2011.03.03 |
申请人 |
RUI XIANGXIN;SHANKER SUNIL;MALHOTRA SANDRA;HASHIM IMRAN;HAYWOOD EDWARD |
发明人 |
RUI XIANGXIN;SHANKER SUNIL;MALHOTRA SANDRA;HASHIM IMRAN;HAYWOOD EDWARD |
分类号 |
B05D3/06;B05D3/02;B05D5/12 |
主分类号 |
B05D3/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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