发明名称 |
MATERIALS FOR INTERFACING HIGH-K DIELECTRIC LAYERS WITH III-V SEMICONDUCTORS |
摘要 |
A group III chalcogenide layer for interfacing a high-k dielectric to a III-V semiconductor surface and methods of forming the same. A III-V QWFET includes a gate stack which comprises a high-K gate dielectric layer disposed on an interfacial layer comprising a group III chalcogenide. In an embodiment, a III-V semiconductor surface comprising a native oxide is sequentially exposed to TMA and H2S provided in an ALD process to remove substantially all the native oxide and form an Al2S3 layer on the semiconductor surface.
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申请公布号 |
US2011147795(A1) |
申请公布日期 |
2011.06.23 |
申请号 |
US20090646436 |
申请日期 |
2009.12.23 |
申请人 |
RACHMADY WILLY;RADOSAVLJEVIC MARKO;DEWEY GILBERT;CHAU ROBERT S |
发明人 |
RACHMADY WILLY;RADOSAVLJEVIC MARKO;DEWEY GILBERT;CHAU ROBERT S. |
分类号 |
H01L29/78;H01L21/335 |
主分类号 |
H01L29/78 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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