<p>A substrate processing method is required in a process for forming a thin film on a substrate so as to improve the process efficiency and form a high quality thin film. To this end, the substrate processing method according to the present invention comprises: forming an undoped layer including a group-III element and a group-V element on a substrate in the first chamber by a vapor deposition process; carrying the substrate out of the first chamber to a buffer chamber then into the second chamber; and forming an n-type layer including a group-III element and a group-V element on a substrate in the second chamber by a vapor deposition process.</p>
申请公布号
WO2011074756(A1)
申请公布日期
2011.06.23
申请号
WO2010KR04664
申请日期
2010.07.16
申请人
LIGADP CO., LTD.;HONG, SUNG JAE;HAN, SEOK MAN;JIN, JOO;JEONG, JIN YEOL
发明人
HONG, SUNG JAE;HAN, SEOK MAN;JIN, JOO;JEONG, JIN YEOL