METHOD FOR MANUFACTURING PHOTOMASK, PHOTOMASK, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a method for manufacturing a mask, for reducing the mask price without significantly increasing a load of electron beam drawing on the mask, and ensuring dimensional uniformity of a device pattern under the same conditions of manufacturing a full-chip mask, in a method for manufacturing a mask in which the number of chips in an effective exposure area of the mask is reduced and a vacant area is formed.

SOLUTION: The method for manufacturing a photomask is characterized in that: a dummy pattern is formed in a vacant area in an effective exposure area of a mask; a light-shielding zone is formed between a device pattern forming area and the dummy pattern forming area; the dummy pattern comprises a plurality of rectangular patterns; the coverage of the dummy pattern is almost equal to the coverage of the device pattern; the minimum pattern dimension of the rectangular pattern is larger than the minimum pattern dimension of the device pattern; and the maximum pattern dimension of the rectangular pattern is equal to or smaller than the maximum shot size of an electron beam drawing apparatus used for drawing the pattern.

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