| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface-emitting semiconductor laser that achieves high-output fundamental transverse mode oscillation by suppressing high-order transverse mode oscillation. SOLUTION: The surface-emitting semiconductor laser 10 includes a substrate 100, an n-type lower DBR 102, an active region 104, a p-type upper DBR 106, a mesa M formed on the substrate, a current narrowing layer 108 formed inside the mesa M and having a conductive region 108B surrounded by a selectively-oxidized oxidization region 108A, an annular p-side electrode 110 formed at the top of the mesa M so as to define a light-emission port 110A, a first insulating film 112 having a first refractive index and covering the light-emission port 110A, and a circular second insulating film 118 having a second refractive index larger than the first refractive index and formed on the first insulating film. COPYRIGHT: (C)2011,JPO&INPIT |
