ETCHANT AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE USING SAME

摘要

Disclosed are: an etchant which is used for rewiring of a semiconductor substrate that has an electrode, and which is capable of selectively etching copper without etching nickel; and a method for manufacturing a semiconductor device using the etchant. Specifically disclosed are: an etchant which is used for rewiring of a semiconductor substrate and contains hydrogen peroxide and citric acid, and wherein the hydrogen peroxide content is 0.75-12% by mass, the citric acid content is 1-20% by mass and the molar ratio of hydrogen peroxide to citric acid is within the range of 0.3-5; an etchant for selective etching of copper, which is used for rewiring of a semiconductor substrate and contains hydrogen peroxide and malic acid, and wherein the hydrogen peroxide content is 0.75-12% by mass, the malic acid content is 1.5-25% by mass and the molar ratio of hydrogen peroxide to malic acid is within the range of 0.2-6; and a method for manufacturing a semiconductor device using the etchants.