| 摘要 |
945,737. Capacitors. TEXAS INSTRUMENTS Inc. Feb. 2, 1960 [Feb. 6, 1959], No. 5691/62. Divided out of 945,734. Heading H1M. A body 15a, Fig. 2, of N or P conductivity semi-conductor material e.g. silicon forming one electrode of a capacitor carries an evaporated dielectric layer 18 of silicon oxide which may be alternatively formed by thermal oxidation of the body. An evaporated conductive layer 19 of e.g. aluminium or gold forms the other electrode, and an ohmic contact 17a is made to the semi-conductor body. The capacitor may be fabricated upon a region of a semi-. conductor body also co-operating with other elements to constitute a complete electric circuit. The semi-conductor electrode may alternatively be of germanium, gallium arsenide, aluminium arsenide, indium antimonide, or other intermetallic alloys. Specifications 945,738, 945,739, 945,740, 945,741, 945,742, 945,743, 945,744, 945,745, 945,746, 945,747, 945,748 and 945,749 also are referred to. |
