发明名称 A SIMPLE ROUTE FOR ALKALI METAL INCORPORATION IN SOLUTION-PROCESSED CRYSTALLINE SEMICONDUCTORS
摘要 A precursor solution for producing a semiconductor includes at least one of an alkali metal or an alkali metal compound dissolved in a solvent, and a metal chalcogenide dissolved in the solvent. A method of producing a precursor solution for producing a semiconductor includes preparing a first precursor solution that has at least one of an alkali metal or an alkali metal compound dissolved in a first solvent, preparing a second precursor solution that has a metal chalcogenide dissolved in a second solvent, and combining the first and second precursor solutions to obtain the precursor solution for producing the semiconductor. A method of producing a semiconductor device includes providing a precursor solution for producing a semiconductor layer on a substructure, and forming a layer of the precursor solution on the substructure. The precursor solution includes at least one of an alkali metal or an alkali metal compound dissolved in a solvent, and a metal chalcogenide dissolved in the solvent.
申请公布号 WO2011075728(A2) 申请公布日期 2011.06.23
申请号 WO2010US61323 申请日期 2010.12.20
申请人 THE REGENTS OF THE UNIVERSITY OF CALIFORNIA;YANG, YANG;HOU, WEI-JEN;LI, SHENG-HAN;TUNG, CHUN-CHIH 发明人 YANG, YANG;HOU, WEI-JEN;LI, SHENG-HAN;TUNG, CHUN-CHIH
分类号 H01L21/205 主分类号 H01L21/205
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