摘要 |
A precursor solution for producing a semiconductor includes at least one of an alkali metal or an alkali metal compound dissolved in a solvent, and a metal chalcogenide dissolved in the solvent. A method of producing a precursor solution for producing a semiconductor includes preparing a first precursor solution that has at least one of an alkali metal or an alkali metal compound dissolved in a first solvent, preparing a second precursor solution that has a metal chalcogenide dissolved in a second solvent, and combining the first and second precursor solutions to obtain the precursor solution for producing the semiconductor. A method of producing a semiconductor device includes providing a precursor solution for producing a semiconductor layer on a substructure, and forming a layer of the precursor solution on the substructure. The precursor solution includes at least one of an alkali metal or an alkali metal compound dissolved in a solvent, and a metal chalcogenide dissolved in the solvent. |
申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA;YANG, YANG;HOU, WEI-JEN;LI, SHENG-HAN;TUNG, CHUN-CHIH |
发明人 |
YANG, YANG;HOU, WEI-JEN;LI, SHENG-HAN;TUNG, CHUN-CHIH |