发明名称 ORGANIC SILICA FILM AND METHOD FOR FORMING SAME, COMPOSITION FOR FORMING INSULATING FILM OF SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING SAME, WIRING STRUCTURE AND SEMICONDUCTOR DEVICE
摘要 <p>An insulating-film-forming composition for a semiconductor device comprising an organic silica sol with a carbon atom content of 11 to 17 atom % and an organic solvent is disclosed. The organic silica sol comprises a hydrolysis-condensation product P1 and a hydrolysis-condensation product P2. The hydrolysis-condensation product P1 is obtained by hydrolyzing and condensing (A) a silane monomer comprising a hydrolyzable group and (B) a polycarbosilane comprising a hydrolyzable group in the presence of (C) a basic catalyst, and the hydrolysis-condensation product P2 is obtained by hydrolyzing and condensing (D) a silane monomer comprising a hydrolyzable group.</p>
申请公布号 EP1981074(B1) 申请公布日期 2011.06.22
申请号 EP20070707817 申请日期 2007.01.31
申请人 JSR CORPORATION 发明人 NAKAGAWA, HISASHI;YAMANAKA, TATSUYA;AKIYAMA, MASAHIRO;KOKUBO, TERUKAZU;NOBE, YOUHEI
分类号 H01L21/312;C08G77/60;C09D183/04;C09D183/14;H01B3/00 主分类号 H01L21/312
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