| 摘要 |
An active matrix substrate comprises a transistor 12, a first capacitor electrode which may be provided by pixel electrode 17 connected to the drain electrode 8 of the TFT 12. A conductor provided in a layer below the pixel electrode functions as the second capacitor electrode. A gate insulating film covering the gate electrode and extending between the conductor and the pixel electrode has a thin section 31 and a non-thin section surrounding the thin section. Thin section 31 is provided in an on-conductor area 38 such that it overlaps the conductor and the pixel electrode. Thereby reducing inconsistency in capacitance values of capacities provided in the active matrix substrate. |
