| 发明名称 |
METHOD FOR FORMING DIELECTRIC FILM |
| 摘要 |
<p>A method of forming an insulation film includes the steps of forming an insulation film on a substrate, and modifying a film quality of the insulation film by exposing the insulation film to atomic state oxygen O* or atomic state hydrogen nitride radicals NH* formed with plasma that uses Kr or Ar as inert gas.</p> |
| 申请公布号 |
EP1265276(B1) |
申请公布日期 |
2011.06.22 |
| 申请号 |
EP20010912316 |
申请日期 |
2001.03.13 |
| 申请人 |
OHMI, TADAHIRO |
发明人 |
OHMI, TADAHIRO;SUGAWA, SHIGETOSHI |
| 分类号 |
H01L21/316;C23C8/02;C23C8/36;H01L21/31;H01L21/3105;H01L21/314;H01L21/318;H01L21/336;H01L21/8238;H01L21/8247;H01L27/105;H01L27/115;H01L29/423;H01L29/78;H01L29/788;H01L29/792 |
主分类号 |
H01L21/316 |
| 代理机构 |
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