METHOD FOR MANUFACTURING REWRITEABLE THREE DIMENSIONAL MEMORY DEVICE

摘要

PURPOSE: A method for manufacturing a rewriteable three dimensional memory device is provided to reduce interface trap density by processing the rear side of the semiconductor film by surface treatment to form an oxidation passivation film. CONSTITUTION: In a method for manufacturing a rewriteable three dimensional memory device, a thin film structure is formed on a substrate(S10). A penetration area exposing a substrate to outside is formed by patterning the thin film structure(S20). A semiconductor film is uniformly formed on the inner side of a penetration region(S30). An oxidation passivation film is formed on the surface of the exposed semiconductor film to the penetration region by processing the semiconductor film through surface treatment(S40). An insulating layer filling the penetration region is formed after processing the semiconductor film by surface treatment.