| 摘要 |
<p>PURPOSE: A method for fabricating a flash memory cell is provided to increase the reliability of a device by preventing a part of a memory gate from being exposed when etching a poly spacer. CONSTITUTION: A thin oxide film is formed on top and side of two gate electrodes which are formed on a semiconductor substrate. A polysilicon layer is deposited over the semiconductor substrate having two gate electrodes thereon. The polysilicon layer is etched-back to form poly-spacer(312') on the both sides of two gate electrodes. A photoresist mask is formed on the semiconductor substrate so that the poly spacer region between two gate electrodes is exposed to the outside. A photoresist product(316) extended to a photoresist mask is generated to cover the top of two gate electrodes. The poly spacer is etched by using the photoresist mask which is generated from the photoresist.</p> |
