Photon source based on localised exciton recombination

摘要

The source has a semiconductor layer (24) i.e. silicon layer, whose central part is framed with highly doped regions (28, 29). A layer portion i.e. insulating layer (25), is formed above the central part of the semiconductor layer, and contains elements i.e. nanocrystals (26), activated by excitons. One metallization part i.e. metal electrode (22) out of two parts, comprises side extension ranging from lambda-0/10xn-e to lambda-0/2xn-e, where lambda-0 is a wavelength in a vacuum of emitted light and n-e is effective mode index formed in a cavity formed by two metallization parts. An independent claim is also included for a method for fabricating a photons source.