| 摘要 |
PURPOSE: An IMD fabrication method for a semiconductor device is provided to implement mechanically reinforced structure while having low dielectric constant by forming an air cap in an interlayer insulating film. CONSTITUTION: In an IMD(Inter Metal Dielectric) fabrication method for a semiconductor device, a metal wirings and via are formed on the semiconductor substrate and a metal guard(170) is formed at the same time. The IMD(200) has a deep silicon via and penetration silicon via therein. An air cap is formed by removing IMD between metal wires through the deep silicon via. A silicon thin film is laminated on the inter-layer insulating film including the air gap. The via plug(260) is formed on the penetration silicon via and metal wiring through a metal gapfill process.
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