| 摘要 |
951,648. Semi-conductor devices. PHILIPS ELECTRICAL INDUSTRIES Ltd. Sept. 9, 1960 [Sept. 12, 1959], No. 31144/60. Heading H1K. A jig for use in alloying electrodes to a semiconductive body includes a weight 5 which is displaceable in tubular portion 1 and on which electrode material 6 is supported with the semiconductive body 3 above it. The jig is heated in a hydrogen atmosphere, which may contain a trace of HCl gas, to melt the electrode material and is then inverted so that the molten electrode material falls on to the semi-conductive body and the weight on to the electrode material, whereupon alloying takes place between body 3 and material 6. An annular electrode may be produced in a jig having a fixed central column and an annular weight (Fig. 3, not shown). To alloy a second annular electrode on the opposite side of a semi-conductor wafer to a first annular electrode the end plug against which the semiconductor wafer is supported is provided with an annular groove into which the electrode fits accurately but which does not exert pressure on the electrode (Fig. 5, not shown). A third electrode comprising an annular wire 30 may then be soldered to wafer 15. In another embodiment (Fig. 9) rectangular electrodes are formed. A core 44 is provided within tubular part 41 of the jig, this core being provided with three rectangular channels in which weights 45, 46, 47 are displaceable. The three electrodes are then formed simultaneously. In each of these embodiments the jig is preferably of graphite, superficially oxidized ferrochromium, or ceramic material, and the displaceable weight may be of similar materials or of nichrome, or may comprise a composite body of graphite and nichrome, the graphite being adjacent the electrode material. In order to reduce friction during the displacement of the weight it may be formed partly of a metal, such as lead, which is liquid during the alloying process, a layer of graphite preventing the lead mixing with the electrode material (Fig. 10, not shown). After alloying indium or tin to silicon the body may be removed from the jig, aluminium may be added to the electrode, and the whole body reheated to obtain a strongly P-type region. |
