| 摘要 |
PURPOSE: A producing method of an ion-implanted semiconductor substrate, the coated substrate, and a formation method of a photoregist relief image are provided to secure the excellent attachment property to mineral surfaces including SiON, silicon oxides, and silicon nitrides. CONSTITUTION: A producing method of an ion-implanted semiconductor substrate comprises the following steps: supplying a semiconductor substrate coated with a chemically amplified positive-acting photoresist composite containing a resin, a photoactive component, and an attach-promotion component with more than one Si group; and applying ions to the substrate. The attach-promotion component is an organic material, and has the molecular weight less than 1,000. |
