FABRICATION APPARATUS FOR THIN FILM TRANSISTOR

摘要

PURPOSE: A fabrication apparatus for a thin film transistor is provided to minimize characteristic deviation due to consecutive environment change by crystallizing deposited amorphous silicon into a poly-crystal silicon. CONSTITUTION: A first multiple chamber deposit amorphous silicon on a substrate. A second multiple chamber has an electrode on the substrate. A loading/unloading chamber(300) is interposed between the first multiple chamber and the second multiple chamber. A power voltage supply unit(320) is arranged on the substrate holder in the lower part and upper part of the loading/unloading chamber and A substrate holder(310) comprises a substrate support, a holder transfer unit, and a holder driving unit. The substrate is mounted in the substrate support. The holder driving unit controls the holder transfer unit.