发明名称 IMPROVED POLARIZATION DESIGNS FOR LITHOGRAPHIC APPARATUS
摘要 PURPOSE: Improved polarization designs for a lithography device are provided to improve the validity of a source mask optimization by introducing an additional degree of freedom on the side of a source with polarization control. CONSTITUTION: An illuminator(IL) conditions a radiation beam(B). A mask table(MT) supports a patterning device(MA). A substrate table(WT) maintains a substrate(W). The substrate table is connected to a second position setter(PW) to accurately position the substrate according to preset parameters. A projection system(PS) projects the pattern given by the radiation beam on the target of the substrate by a patterning device.
申请公布号 KR20110068918(A) 申请公布日期 2011.06.22
申请号 KR20100127916 申请日期 2010.12.14
申请人 ASML HOLDING N.V. 发明人 HANSEN STEVEN GEORGE
分类号 H01L21/027;G03F7/20 主分类号 H01L21/027
代理机构 代理人
主权项
地址