| 摘要 |
PURPOSE: A method for fabricating insulation layer in a semiconductor device is provided to implant uniform burying using different deposition seed according to the surface state of a target film. CONSTITUTION: In a method for fabricating insulation layer in a semiconductor device, a trench(115) is formed within a semiconductor substrate. The trench is filled with a mobile insulating material. A mobile insulating layer(135a) buries a part of the bottom of a trench while exposing the side of a trench. A liner insulating layer(125) is formed on the mobile insulating layer and the trench. The exposed mobile insulating layer and the trench are etched to remain the liner insulating layer on the exposed mobile insulating layer and the trench. A preliminary buried insulating layer is formed on the liner insulating layer to supply oxidation deposition source to the etched substrate.
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