METHOD OF FORMING SEMICONDUCTOR CELL STRUCTURE, METHOD OF FORMING SEMICONDUCTOR DEVICE COMPRISING THE SEMICONDUCTOR CELL STRUCTURE, AND METHOD OF FORMING SEMICONDUCTOR MODULE COMPRISING THE SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method of forming a semiconductor cell structure, a method of forming a semiconductor device comprising the semiconductor cell structure, and method of forming a semiconductor module comprising the semiconductor device are provided to improve electrical characteristics by minimizing the size of a leakage current flowing through a penetration hole. CONSTITUTION: In a method of forming a semiconductor cell structure, a method of forming a semiconductor device comprising the semiconductor cell structure, and method of forming a semiconductor module comprising the semiconductor device, a first insulating layer(20) is formed on a semiconductor substrate. A connection pattern(85) is formed in the first insulating layer. Second and third insulating layers are successively activated on the connection pattern. A penetration hole(129) is formed on the second/ third insulating layers. The penetration hole exposes connection pattern to outside. The first to third insulating layers have different etch rates. The second insulating layer has a material different from the mask pattern.