发明名称 |
NANOWIRE MESH DEVICE AND METHOD OF FABRICATING SAME |
摘要 |
<p>A semiconductor structure is provided that includes a plurality of vertically stacked and vertically spaced apart semiconductor nanowires (e.g., a semiconductor nanowire mesh) located on a surface of a substrate. One end segment of each vertically stacked and vertically spaced apart semiconductor nanowires is connected to a source region and another end segment of each vertically stacked and vertically spaced apart semiconductor nanowires is connected to a drain region. A gate region including a gate dielectric and a gate conductor abuts the plurality of vertically stacked and vertically spaced apart semiconductor nanowires, and the source regions and the drain regions are self-aligned with the gate region.</p> |
申请公布号 |
EP2335285(A1) |
申请公布日期 |
2011.06.22 |
申请号 |
EP20090799083 |
申请日期 |
2009.12.11 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHANG, JOSEPHINE;BEDELL, STEPHEN;CHANG, PAUL;GUILLORN, MICHAEL;SLEIGHT, JEFFREY |
分类号 |
B82Y40/00;H01L29/06;H01L29/423;H01L29/66;H01L29/775;H01L29/78;H01L29/786 |
主分类号 |
B82Y40/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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