发明名称 |
SILICON NANODOTS CLUSTERS AND METHOD OF PREPARING THE SAME |
摘要 |
PURPOSE: A silicon nanodot cluster and a producing method thereof are provided to reduce the size and the combining density of the silicon nanodot cluster by pre-processing a substrate. CONSTITUTION: A producing method of a silicon nanodot cluster comprises the following steps: surface-processing a GaN substrate with an RCA solution or a piranha solution(S1); and producing the silicon nanodot cluster on the surface-processed GaN substrate by a plasma chemical vapor deposition method(S2). The RCA solution contains 10~25vol% of hydrogen peroxide, 10~25col% of ammonia solution, and 50~80vol% of water. |
申请公布号 |
KR20110068413(A) |
申请公布日期 |
2011.06.22 |
申请号 |
KR20090125356 |
申请日期 |
2009.12.16 |
申请人 |
INDUSTRY-ACADEMY COOPERATION CORPS OF SUNCHON NATIONAL UNIVERSITY |
发明人 |
LEE, JI MYON;KIM, JAE KWAN |
分类号 |
B82B3/00;B82B1/00 |
主分类号 |
B82B3/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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