| 发明名称 |
NON-POLAR (AL,B,IN,GA)N QUANTUM WELL AND HETEROSTRUCTURE MATERIALS AND DEVICES |
| 摘要 |
Non-polar (1120) a-plane gallium nitride (GaN) films with planar surfaces are grown on (1102) r-plane sapphire substrates by employing a low temperature nucleation layer as a buffer layer prior to a high temperature growth of the non-polar (1120) a-plane GaN thin films |
| 申请公布号 |
KR20110069133(A) |
申请公布日期 |
2011.06.22 |
| 申请号 |
KR20117010086 |
申请日期 |
2003.04.15 |
| 申请人 |
THE REGENTS OF THE UNIVERSITY OF CALIFORNIA |
发明人 |
CRAVEN MICHAEL D.;KELLER STACIA;DENBAARS STEVEN P.;MARGALITH TAL;SPECK JAMES S.;NAKAMURA SHUJI;MISHRA UMESH K. |
| 分类号 |
C30B25/02;C23C16/04;C30B25/04;C30B25/10;C30B25/18;C30B29/38;C30B29/40;C30B29/60;H01L21/205;H01L33/00;H01S5/343 |
主分类号 |
C30B25/02 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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