发明名称 |
FORMATION OF DEVICES BY EPITAXIAL LAYER OVERGROWTH |
摘要 |
Methods and structures are provided for formation of devices, e.g., solar cells, on substrates including, e.g., lattice-mismatched materials, by the use of aspect ratio trapping (ART) and epitaxial layer overgrowth (ELO). In general, in a first aspect, embodiments of the invention may include a method of forming a structure. The method includes forming a first opening in a masking layer disposed over a substrate that includes a first semiconductor material. A first layer, which includes a second semiconductor material lattice-mismatched to the first semiconductor material, is formed within the first opening. The first layer has a thickness sufficient to extend above a top surface of the masking layer. A second layer, which includes the second semiconductor material, is formed on the first layer and over at least a portion of the masking layer. A vertical growth rate of the first layer is greater than a lateral growth rate of the first layer and a lateral growth rate of the second layer is greater than a vertical growth rate of the second layer. |
申请公布号 |
EP2335273(A2) |
申请公布日期 |
2011.06.22 |
申请号 |
EP20090815273 |
申请日期 |
2009.09.18 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. |
发明人 |
FIORENZA, JAMES;LOCHTEFELD, ANTHONY;BAI, JIE;PARK, JI-SOO;HYDRICK, JENNIFER;LI, JIZHONG;CHENG, ZHIYUAN |
分类号 |
H01L21/20;H01L21/02;H01L31/042 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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