APPARATUS AND METHOD FOR INSPECTING LED EPIWAFER USING PHOTOLUMINESCENCE IMAGING
摘要
PURPOSE: An apparatus and method for inspecting LED epiwafer using photoluminescence imaging are provided to reduce a time for monitoring an epiwafer by detecting PL(photoluminescence) with CCD camera or CMOS camera and analyzing an image signal. CONSTITUTION: In an apparatus and method for inspecting LED epiwafer using photoluminescence imaging, a lighting unit outputs light having wavelength shorter than that of an LED epiwafer to a target. A pickup unit(130) obtains the image of light emitted from the LED epitaxial wafer. A filter unit(140) is comprised of a plurality of bandpass filter passing an emitted light within a certain wavelength An image processing unit(150) calculates the strength of the light at sub-area corresponding to the LED epitaxial wafer.
申请公布号
KR20110067843(A)
申请公布日期
2011.06.22
申请号
KR20090124608
申请日期
2009.12.15
申请人
KOREA INSTITUTE OF INDUSTRIAL TECHNOLOGY
发明人
KIM, JONG SEOK;KIM, HYUNG TAE;KIM, SEUNG TAEK;JEONG, HOON;PARK, HYO YOUNG