| 摘要 |
Embodiments of the present invention provide systems and techniques for determining the effect of process variations. During operation, the system can receive a layout which includes multiple instances of a pattern. Next, the system can correct the pattern instances using different photolithography process models which model the photolithography process at different exposure and focus conditions. Next, the corrected layout can be printed on a wafer. The system can then perform electrical tests on the wafer, or it can measure the critical dimensions of the features on the wafer. The yield loss or the exposure-focus matrix can then be generated by using the test data or the measurement data.
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