发明名称 |
Semiconductor device with semi-insulating substrate portions |
摘要 |
A semiconductor substrate includes semi-insulating portions beneath openings in a patterned hardmask film formed over a semiconductor substructure to a thickness sufficient to prevent charged particles from passing through the hardmask. The semi-insulating portions include charged particles and may extend deep into the semiconductor substrate and electrically insulate devices formed on opposed sides of the semi-insulating portions. The charged particles may advantageously be protons and further substrate portions covered by the patterned hardmask film are substantially free of the charged particles.
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申请公布号 |
US7964900(B2) |
申请公布日期 |
2011.06.21 |
申请号 |
US20090586688 |
申请日期 |
2009.09.24 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD |
发明人 |
LIN WEN-CHIN;TANG DENNY;LEE CHUAN-YING;CHENG HSU CHEN |
分类号 |
H01L29/76;H01L29/94;H01L31/062;H01L31/113;H01L31/119 |
主分类号 |
H01L29/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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