发明名称 |
Method of forming high-dielectric constant films for semiconductor devices |
摘要 |
A method is provided for forming high dielectric constant (high-k) films for semiconductor devices. According to one embodiment, a metal-carbon-oxygen high-k film is deposited by alternately and sequentially exposing a substrate to a metal-carbon precursor and near saturation exposure level of an oxidation source containing ozone. The method is capable of forming a metal-carbon-oxygen high-k film with good thickness uniformity while impeding growth of an interface layer between the metal-carbon-oxygen high-k film and the substrate. According to one embodiment, the metal-carbon-oxygen high-k film may be treated with an oxidation process to remove carbon from the film.
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申请公布号 |
US7964515(B2) |
申请公布日期 |
2011.06.21 |
申请号 |
US20070963150 |
申请日期 |
2007.12.21 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
CLARK ROBERT D.;WAJDA CORY |
分类号 |
H01L21/31;C23C14/00;C23C16/00;H01L21/469 |
主分类号 |
H01L21/31 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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