发明名称 |
Semiconductor light-emitting device and method of manufacturing the same |
摘要 |
Disclosed is a semiconductor light-emitting device wherein a pn junction is formed by forming, as a p-type layer (11), a semiconductor thin film which is composed of a ZnO compound doped with nitrogen on an n-type ZnO bulk single crystal substrate (10) whose resistance is lowered by being doped with donor impurities. It is preferable to form the p-type layer (11) on a zinc atom containing surface of the n-type ZnO bulk single crystal substrate (10).
|
申请公布号 |
US7964868(B2) |
申请公布日期 |
2011.06.21 |
申请号 |
US20060065795 |
申请日期 |
2006.09.05 |
申请人 |
CITIZEN TOHOKU CO., LTD.;INCORPORATED NATIONAL UNIVERSITY IWATE UNIVERSITY |
发明人 |
NAKAGAWA AKIRA;KASHIWABA YASUBE;NIIKURA IKUO |
分类号 |
H01L29/10;H01L33/12;H01L33/16;H01L33/28 |
主分类号 |
H01L29/10 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|