发明名称 Method of manufacturing semiconductor device
摘要 A metal layer is formed on an upper surface of a resin layer provided to cover a plurality of semiconductor chips at a side on which an internal connecting terminal is disposed and the internal connecting terminal, and the metal layer is pressed to cause the metal layer in a corresponding portion to a wiring pattern to come in contact with the internal connecting terminal, and to then bond the metal layer in a portion provided in contact with the internal connecting terminal to the internal connecting terminal in a portion provided in contact with the metal layer.
申请公布号 US7964493(B2) 申请公布日期 2011.06.21
申请号 US20080336854 申请日期 2008.12.17
申请人 SHINKO ELECTRIC INDUSTRIES CO., LTD. 发明人 YAMANO TAKAHARU
分类号 H01L21/4763 主分类号 H01L21/4763
代理机构 代理人
主权项
地址