| 摘要 |
A mask is formed with first contact patterns in first columns and second contact patterns in second columns. Each first column is formed between adjacent second columns. The first contact pattern in each first column is aligned with the first contact patterns in the other first columns. The second contact pattern in each second column is aligned with the second contact patterns in the other second columns. The first contact patterns in each first column are not aligned with the second contact patterns in the second columns. Patterning is performed using the mask to secure the size of the contact patterns and to improve a process margin when manufacturing semiconductor devices.
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