发明名称 |
Method of manufacturing III nitride crystal, III nitride crystal substrate, and semiconductor device |
摘要 |
Affords III-nitride crystals having a major surface whose variance in crystallographic plane orientation with respect to an {hkil} plane chosen exclusive of the {0001} form is minimal. A method of manufacturing the III-nitride crystal is one of: conditioning a plurality of crystal plates (10) in which the deviation in crystallographic plane orientation in any given point on the major face (10m) of the crystal plates (10), with respect to an {hkil} plane chosen exclusive of the {0001} form, is not greater than 0.5°; arranging the plurality of crystal plates (10) in a manner such that the plane-orientation deviation, with respect to the {hkil} plane, in any given point on the major-face (10m) collective surface (10a) of the plurality of crystal plates (10) will be not greater than 0.5°, and such that at least a portion of the major face (10m) of the crystal plates (10) is exposed; and growing second III-nitride crystal (20) onto the exposed areas of the major faces (10m) of the plurality of crystal plates (10).
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申请公布号 |
US7964477(B2) |
申请公布日期 |
2011.06.21 |
申请号 |
US20090470493 |
申请日期 |
2009.05.22 |
申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
FUJIWARA SHINSUKE |
分类号 |
H01L21/205;C30B9/00;C30B25/18;C30B29/38;H01L21/208 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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