发明名称 |
Pressure switch employing silicon on insulator (SOI) technology |
摘要 |
A pressure switch employs semiconductor silicon on insulator (SOI) technology and utilizes a first silicon wafer with a deflecting diaphragm having two metal contacts deposited thereon. Secured to the silicon wafer is a glass wafer having a central aperture defining a deflecting region. Positioned on the glass wafer is third metal contact positioned to receive the two contacts deposited on the silicon wafer when a predetermined pressure is applied. As predetermined pressure is applied, the contacts on the silicon wafer will touch the contact on the glass wafer and a connection will be made between the silicon wafer contacts to create a low impedance path between the two contacts.
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申请公布号 |
US7964807(B2) |
申请公布日期 |
2011.06.21 |
申请号 |
US20070903450 |
申请日期 |
2007.09.21 |
申请人 |
KULITE SEMICONDUCTOR PRODUCTS, INC. |
发明人 |
KURTZ ANTHONY D.;DEWEERT JOSEPH VAN |
分类号 |
H01H9/00 |
主分类号 |
H01H9/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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