发明名称 Pressure switch employing silicon on insulator (SOI) technology
摘要 A pressure switch employs semiconductor silicon on insulator (SOI) technology and utilizes a first silicon wafer with a deflecting diaphragm having two metal contacts deposited thereon. Secured to the silicon wafer is a glass wafer having a central aperture defining a deflecting region. Positioned on the glass wafer is third metal contact positioned to receive the two contacts deposited on the silicon wafer when a predetermined pressure is applied. As predetermined pressure is applied, the contacts on the silicon wafer will touch the contact on the glass wafer and a connection will be made between the silicon wafer contacts to create a low impedance path between the two contacts.
申请公布号 US7964807(B2) 申请公布日期 2011.06.21
申请号 US20070903450 申请日期 2007.09.21
申请人 KULITE SEMICONDUCTOR PRODUCTS, INC. 发明人 KURTZ ANTHONY D.;DEWEERT JOSEPH VAN
分类号 H01H9/00 主分类号 H01H9/00
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