| 摘要 |
The present invention provides a method for depositing or growing a group III-nitride layer, e.g. GaN layer (5), on a substrate (1), the substrate (1) comprising at least a Ge surface (3), preferably with hexagonal symmetry. The method comprises heating the substrate (1) to a nitridation temperature between 400° C. and 940° C. while exposing the substrate (1) to a nitrogen gas flow and subsequently depositing the group III-nitride layer, e.g. GaN layer (5), onto the Ge surface (3) at a deposition temperature between 100° C. and 940° C. By a method according to embodiments of the invention, a group III-nitride layer, e.g. GaN layer (5), with good crystal quality may be obtained. The present invention furthermore provides a group III-nitride/substrate structure formed by the method according to embodiments of the present invention and a semiconductor device comprising at least one such structure.
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