发明名称 Low power floating body memory cell based on low bandgap material quantum well
摘要 Embodiments of the invention relate to apparatus, system and method for use of a memory cell having improved power consumption characteristics, using a low-bandgap material quantum well structure together with a floating body cell.
申请公布号 US7964866(B2) 申请公布日期 2011.06.21
申请号 US20080119234 申请日期 2008.05.12
申请人 INTEL CORPORATION 发明人 RAKSHIT TITASH;DEWEY GILBERT;PILLARISETTY RAVI
分类号 H01L49/00;H01L29/12;H01L29/778 主分类号 H01L49/00
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