发明名称 |
Low power floating body memory cell based on low bandgap material quantum well |
摘要 |
Embodiments of the invention relate to apparatus, system and method for use of a memory cell having improved power consumption characteristics, using a low-bandgap material quantum well structure together with a floating body cell.
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申请公布号 |
US7964866(B2) |
申请公布日期 |
2011.06.21 |
申请号 |
US20080119234 |
申请日期 |
2008.05.12 |
申请人 |
INTEL CORPORATION |
发明人 |
RAKSHIT TITASH;DEWEY GILBERT;PILLARISETTY RAVI |
分类号 |
H01L49/00;H01L29/12;H01L29/778 |
主分类号 |
H01L49/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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