| 摘要 |
FIELD: electricity. ^ SUBSTANCE: switch contains three-wire coplanar microstrip line (MSL) from 10 nm to 100 nm thick, having breaks from 0.1 microns to 0.2 microns, and deposited on membrane made of diamond film from 300 nm to 500 nm thick. In the area of broken segments there input are UV radiation sources. Structure is deposited at dielectric substrate provided with control element of very large scale integrated circuit (VLSIC). Electrical connection (switching) through MSL break is performed as follows: at UV radiation exposure directed to diamond material and localised at the area of MSL current-carrying conductors break the enabled state (ON), diamond material acquires metallic conductivity and electrically connects the current-carrying conductors of MSL. Electrical disconnection of the current-carrying conductors of MSL happens at the absence of UV radiation exposure in switched off state (OFF). Switching of microwave signals from input to one or more outputs, or from several outputs to input, is performed by means of UV emitters located in MSL breaks, note that the amount of UV emitters should correspond to the number of MSL breaks. ^ EFFECT: increase of isolation between channels, fast response, decrease of losses and sizes. ^ 9 dwg, 1 tbl, 5 ex |
